Thickness-Induced Metal-Insulator Transition in Sb-doped SnO(2) Ultrathin Films: The Role of Quantum Confinement

A thickness induced metal-insulator transition (MIT) was firstly observed in Sb-doped SnO(2) (SnO(2):Sb) epitaxial ultrathin films deposited on [Image: see text] sapphire substrates by pulsed laser deposition. Both electrical and spectroscopic studies provide clear evidence of a critical thickness f...

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Detalles Bibliográficos
Autores principales: Ke, Chang, Zhu, Weiguang, Zhang, Zheng, Soon Tok, Eng, Ling, Bo, Pan, Jisheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4663506/
https://www.ncbi.nlm.nih.gov/pubmed/26616286
http://dx.doi.org/10.1038/srep17424

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4663506/
https://www.ncbi.nlm.nih.gov/pubmed/26616286
http://dx.doi.org/10.1038/srep17424

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