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AlN Nanowall Structures Grown on Si (111) Substrate by Molecular Beam Epitaxy
AlN nanowall structures were grown on Si (111) substrate using molecular beam epitaxy at substrate temperature of 700 °C with N/Al flux ratios ranging from 50 to 660. A few types of other AlN nanostructures were also grown under the nitrogen-rich conditions. The AlN nanowalls were ranged typically 6...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Springer US
2015
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4666846/ https://www.ncbi.nlm.nih.gov/pubmed/26625884 http://dx.doi.org/10.1186/s11671-015-1178-7 |