Silicon etching using only Oxygen at high temperature: An alternative approach to Si micro-machining on 150 mm Si wafers

Using a combination of low-pressure oxygen and high temperatures, isotropic and anisotropic silicon (Si) etch rates can be controlled up to ten micron per minute. By varying the process conditions, we show that the vertical-to-lateral etch rate ratio can be controlled from 1:1 isotropic etch to 1.8:...

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Detalles Bibliográficos
Autores principales: Chai, Jessica, Walker, Glenn, Wang, Li, Massoubre, David, Tan, Say Hwa, Chaik, Kien, Hold, Leonie, Iacopi, Alan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4669475/
https://www.ncbi.nlm.nih.gov/pubmed/26634813
http://dx.doi.org/10.1038/srep17811

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4669475/
https://www.ncbi.nlm.nih.gov/pubmed/26634813
http://dx.doi.org/10.1038/srep17811

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