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Silicon etching using only Oxygen at high temperature: An alternative approach to Si micro-machining on 150 mm Si wafers
Using a combination of low-pressure oxygen and high temperatures, isotropic and anisotropic silicon (Si) etch rates can be controlled up to ten micron per minute. By varying the process conditions, we show that the vertical-to-lateral etch rate ratio can be controlled from 1:1 isotropic etch to 1.8:...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2015
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4669475/ https://www.ncbi.nlm.nih.gov/pubmed/26634813 http://dx.doi.org/10.1038/srep17811 |