PMMA interlayer-modulated memory effects by space charge polarization in resistive switching based on CuSCN-nanopyramids/ZnO-nanorods p-n heterojunction

Resistive switching (RS) devices are commonly believed as a promising candidate for next generation nonvolatile resistance random access memory. Here, polymethylmethacrylate (PMMA) interlayer was introduced at the heterointerface of p-CuSCN hollow nanopyramid arrays and n-ZnO nanorod arrays, resulti...

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Detalles Bibliográficos
Autores principales: Cheng, Baochang, Zhao, Jie, Xiao, Li, Cai, Qiangsheng, Guo, Rui, Xiao, Yanhe, Lei, Shuijin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4673466/
https://www.ncbi.nlm.nih.gov/pubmed/26648249
http://dx.doi.org/10.1038/srep17859

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4673466/
https://www.ncbi.nlm.nih.gov/pubmed/26648249
http://dx.doi.org/10.1038/srep17859

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