Strain induced topological phase transitions in monolayer honeycomb structures of group-V binary compounds

We present first-principles calculations of electronic structures of a class of two-dimensional (2D) honeycomb structures of group-V binary compounds. Our results show these new 2D materials are stable semiconductors with direct or indirect band gaps. The band gap can be tuned by applying lattice st...

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Detalles Bibliográficos
Autores principales: Nie, Yaozhuang, Rahman, Mavlanjan, Wang, Daowei, Wang, Can, Guo, Guanghua
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4674708/
https://www.ncbi.nlm.nih.gov/pubmed/26656257
http://dx.doi.org/10.1038/srep17980

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4674708/
https://www.ncbi.nlm.nih.gov/pubmed/26656257
http://dx.doi.org/10.1038/srep17980

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