Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures

Spin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensive attentions due to its non-volatility, high density and low power consumption. The core device in STT-MRAM is CoFeB/MgO-based magnetic tunnel junction (MTJ), which possesses a high tunnel magnetoresistance ratio as well...

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Detalles Bibliográficos
Autores principales: Peng, Shouzhong, Wang, Mengxing, Yang, Hongxin, Zeng, Lang, Nan, Jiang, Zhou, Jiaqi, Zhang, Youguang, Hallal, Ali, Chshiev, Mairbek, Wang, Kang L., Zhang, Qianfan, Zhao, Weisheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4676065/
https://www.ncbi.nlm.nih.gov/pubmed/26656721
http://dx.doi.org/10.1038/srep18173

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4676065/
https://www.ncbi.nlm.nih.gov/pubmed/26656721
http://dx.doi.org/10.1038/srep18173

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