Coincident-site lattice matching during van der Waals epitaxy

Van der Waals (vdW) epitaxy is an attractive method for the fabrication of vdW heterostructures. Here Sb(2)Te(3) films grown on three different kind of graphene substrates (monolayer epitaxial graphene, quasi freestanding bilayer graphene and the SiC (6√3 × 6√3)R30° buffer layer) are used to study t...

Descripción completa

Detalles Bibliográficos
Autores principales: Boschker, Jos E., Galves, Lauren A., Flissikowski, Timur, Lopes, Joao Marcelo J., Riechert, Henning, Calarco, Raffaella
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4677287/
https://www.ncbi.nlm.nih.gov/pubmed/26658715
http://dx.doi.org/10.1038/srep18079

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4677287/
https://www.ncbi.nlm.nih.gov/pubmed/26658715
http://dx.doi.org/10.1038/srep18079

Ejemplares similares