Reversible strain-induced magnetization switching in FeGa nanomagnets: Pathway to a rewritable, non-volatile, non-toggle, extremely low energy straintronic memory

We report reversible strain-induced magnetization switching between two stable/metastable states in ~300 nm sized FeGa nanomagnets delineated on a piezoelectric PMN-PT substrate. Voltage of one polarity applied across the substrate generates compressive strain in a nanomagnet and switches its magnet...

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Detalles Bibliográficos
Autores principales: Ahmad, Hasnain, Atulasimha, Jayasimha, Bandyopadhyay, Supriyo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4677403/
https://www.ncbi.nlm.nih.gov/pubmed/26657829
http://dx.doi.org/10.1038/srep18264

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4677403/
https://www.ncbi.nlm.nih.gov/pubmed/26657829
http://dx.doi.org/10.1038/srep18264

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