Black Phosphorus Transistors with Near Band Edge Contact Schottky Barrier

Black phosphorus (BP) is a new class of 2D material which holds promise for next generation transistor applications owing to its intrinsically superior carrier mobility properties. Among other issues, achieving good ohmic contacts with low source-drain parasitic resistance in BP field-effect transis...

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Detalles Bibliográficos
Autores principales: Ling, Zhi-Peng, Sakar, Soumya, Mathew, Sinu, Zhu, Jun-Tao, Gopinadhan, K., Venkatesan, T., Ang, Kah-Wee
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4678863/
https://www.ncbi.nlm.nih.gov/pubmed/26667402
http://dx.doi.org/10.1038/srep18000

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4678863/
https://www.ncbi.nlm.nih.gov/pubmed/26667402
http://dx.doi.org/10.1038/srep18000

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