Ion beam nanopatterning of III-V semiconductors: consistency of experimental and simulation trends within a chemistry-driven theory

Several proposed mechanisms and theoretical models exist concerning nanostructure evolution on III-V semiconductors (particularly GaSb) via ion beam irradiation. However, making quantitative contact between experiment on the one hand and model-parameter dependent predictions from different theories...

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Detalles Bibliográficos
Autores principales: El-Atwani, O., Norris, S. A., Ludwig, K., Gonderman, S., Allain, J. P.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4680892/
https://www.ncbi.nlm.nih.gov/pubmed/26670948
http://dx.doi.org/10.1038/srep18207

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4680892/
https://www.ncbi.nlm.nih.gov/pubmed/26670948
http://dx.doi.org/10.1038/srep18207

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