Space-charge Effect on Electroresistance in Metal-Ferroelectric-Metal capacitors

Resistive switching through electroresistance (ER) effect in metal-ferroelectric-metal (MFM) capacitors has attracted increasing interest due to its potential applications as memories and logic devices. However, the detailed electronic mechanisms resulting in large ER when polarisation switching occ...

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Detalles Bibliográficos
Autores principales: Tian, Bo Bo, Liu, Yang, Chen, Liu Fang, Wang, Jian Lu, Sun, Shuo, Shen, Hong, Sun, Jing Lan, Yuan, Guo Liang, Fusil, Stéphane, Garcia, Vincent, Dkhil, Brahim, Meng, Xiang Jian, Chu, Jun Hao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4680931/
https://www.ncbi.nlm.nih.gov/pubmed/26670138
http://dx.doi.org/10.1038/srep18297

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4680931/
https://www.ncbi.nlm.nih.gov/pubmed/26670138
http://dx.doi.org/10.1038/srep18297

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