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Space-charge Effect on Electroresistance in Metal-Ferroelectric-Metal capacitors
Resistive switching through electroresistance (ER) effect in metal-ferroelectric-metal (MFM) capacitors has attracted increasing interest due to its potential applications as memories and logic devices. However, the detailed electronic mechanisms resulting in large ER when polarisation switching occ...
Autores principales: | Tian, Bo Bo, Liu, Yang, Chen, Liu Fang, Wang, Jian Lu, Sun, Shuo, Shen, Hong, Sun, Jing Lan, Yuan, Guo Liang, Fusil, Stéphane, Garcia, Vincent, Dkhil, Brahim, Meng, Xiang Jian, Chu, Jun Hao |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2015
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4680931/ https://www.ncbi.nlm.nih.gov/pubmed/26670138 http://dx.doi.org/10.1038/srep18297 |
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