Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping

[Image: see text] Nanocathodoluminescence reveals the spectral properties of individual InGaN quantum wells in high efficiency light emitting diodes. We observe a variation in the emission wavelength of each quantum well, in correlation with the Si dopant concentration in the quantum barriers. This...

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Detalles Bibliográficos
Autores principales: Griffiths, James T., Zhang, Siyuan, Rouet-Leduc, Bertrand, Fu, Wai Yuen, Bao, An, Zhu, Dandan, Wallis, David J., Howkins, Ashley, Boyd, Ian, Stowe, David, Kappers, Menno J., Humphreys, Colin J., Oliver, Rachel A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2015
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4682848/
https://www.ncbi.nlm.nih.gov/pubmed/26488912
http://dx.doi.org/10.1021/acs.nanolett.5b03531

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4682848/
https://www.ncbi.nlm.nih.gov/pubmed/26488912
http://dx.doi.org/10.1021/acs.nanolett.5b03531

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