Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping

[Image: see text] Nanocathodoluminescence reveals the spectral properties of individual InGaN quantum wells in high efficiency light emitting diodes. We observe a variation in the emission wavelength of each quantum well, in correlation with the Si dopant concentration in the quantum barriers. This...

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Detalles Bibliográficos
Autores principales: Griffiths, James T., Zhang, Siyuan, Rouet-Leduc, Bertrand, Fu, Wai Yuen, Bao, An, Zhu, Dandan, Wallis, David J., Howkins, Ashley, Boyd, Ian, Stowe, David, Kappers, Menno J., Humphreys, Colin J., Oliver, Rachel A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2015
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4682848/
https://www.ncbi.nlm.nih.gov/pubmed/26488912
http://dx.doi.org/10.1021/acs.nanolett.5b03531
Descripción
Sumario:[Image: see text] Nanocathodoluminescence reveals the spectral properties of individual InGaN quantum wells in high efficiency light emitting diodes. We observe a variation in the emission wavelength of each quantum well, in correlation with the Si dopant concentration in the quantum barriers. This is reproduced by band profile simulations, which reveal the reduction of the Stark shift in the quantum wells by Si doping. We demonstrate nanocathodoluminescence is a powerful technique to optimize doping in optoelectronic devices.

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