Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping

[Image: see text] Nanocathodoluminescence reveals the spectral properties of individual InGaN quantum wells in high efficiency light emitting diodes. We observe a variation in the emission wavelength of each quantum well, in correlation with the Si dopant concentration in the quantum barriers. This...

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Autores principales: Griffiths, James T., Zhang, Siyuan, Rouet-Leduc, Bertrand, Fu, Wai Yuen, Bao, An, Zhu, Dandan, Wallis, David J., Howkins, Ashley, Boyd, Ian, Stowe, David, Kappers, Menno J., Humphreys, Colin J., Oliver, Rachel A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2015
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4682848/
https://www.ncbi.nlm.nih.gov/pubmed/26488912
http://dx.doi.org/10.1021/acs.nanolett.5b03531
_version_ 1782405934650228736
author Griffiths, James T.
Zhang, Siyuan
Rouet-Leduc, Bertrand
Fu, Wai Yuen
Bao, An
Zhu, Dandan
Wallis, David J.
Howkins, Ashley
Boyd, Ian
Stowe, David
Kappers, Menno J.
Humphreys, Colin J.
Oliver, Rachel A.
author_facet Griffiths, James T.
Zhang, Siyuan
Rouet-Leduc, Bertrand
Fu, Wai Yuen
Bao, An
Zhu, Dandan
Wallis, David J.
Howkins, Ashley
Boyd, Ian
Stowe, David
Kappers, Menno J.
Humphreys, Colin J.
Oliver, Rachel A.
author_sort Griffiths, James T.
collection PubMed
description [Image: see text] Nanocathodoluminescence reveals the spectral properties of individual InGaN quantum wells in high efficiency light emitting diodes. We observe a variation in the emission wavelength of each quantum well, in correlation with the Si dopant concentration in the quantum barriers. This is reproduced by band profile simulations, which reveal the reduction of the Stark shift in the quantum wells by Si doping. We demonstrate nanocathodoluminescence is a powerful technique to optimize doping in optoelectronic devices.
format Online
Article
Text
id pubmed-4682848
institution National Center for Biotechnology Information
language English
publishDate 2015
publisher American Chemical Society
record_format MEDLINE/PubMed
spelling pubmed-46828482015-12-18 Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping Griffiths, James T. Zhang, Siyuan Rouet-Leduc, Bertrand Fu, Wai Yuen Bao, An Zhu, Dandan Wallis, David J. Howkins, Ashley Boyd, Ian Stowe, David Kappers, Menno J. Humphreys, Colin J. Oliver, Rachel A. Nano Lett [Image: see text] Nanocathodoluminescence reveals the spectral properties of individual InGaN quantum wells in high efficiency light emitting diodes. We observe a variation in the emission wavelength of each quantum well, in correlation with the Si dopant concentration in the quantum barriers. This is reproduced by band profile simulations, which reveal the reduction of the Stark shift in the quantum wells by Si doping. We demonstrate nanocathodoluminescence is a powerful technique to optimize doping in optoelectronic devices. American Chemical Society 2015-10-21 2015-11-11 /pmc/articles/PMC4682848/ /pubmed/26488912 http://dx.doi.org/10.1021/acs.nanolett.5b03531 Text en Copyright © 2015 American Chemical Society This is an open access article published under a Creative Commons Attribution (CC-BY) License (http://pubs.acs.org/page/policy/authorchoice_ccby_termsofuse.html) , which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited.
spellingShingle Griffiths, James T.
Zhang, Siyuan
Rouet-Leduc, Bertrand
Fu, Wai Yuen
Bao, An
Zhu, Dandan
Wallis, David J.
Howkins, Ashley
Boyd, Ian
Stowe, David
Kappers, Menno J.
Humphreys, Colin J.
Oliver, Rachel A.
Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping
title Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping
title_full Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping
title_fullStr Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping
title_full_unstemmed Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping
title_short Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping
title_sort nanocathodoluminescence reveals mitigation of the stark shift in ingan quantum wells by si doping
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4682848/
https://www.ncbi.nlm.nih.gov/pubmed/26488912
http://dx.doi.org/10.1021/acs.nanolett.5b03531
work_keys_str_mv AT griffithsjamest nanocathodoluminescencerevealsmitigationofthestarkshiftininganquantumwellsbysidoping
AT zhangsiyuan nanocathodoluminescencerevealsmitigationofthestarkshiftininganquantumwellsbysidoping
AT rouetleducbertrand nanocathodoluminescencerevealsmitigationofthestarkshiftininganquantumwellsbysidoping
AT fuwaiyuen nanocathodoluminescencerevealsmitigationofthestarkshiftininganquantumwellsbysidoping
AT baoan nanocathodoluminescencerevealsmitigationofthestarkshiftininganquantumwellsbysidoping
AT zhudandan nanocathodoluminescencerevealsmitigationofthestarkshiftininganquantumwellsbysidoping
AT wallisdavidj nanocathodoluminescencerevealsmitigationofthestarkshiftininganquantumwellsbysidoping
AT howkinsashley nanocathodoluminescencerevealsmitigationofthestarkshiftininganquantumwellsbysidoping
AT boydian nanocathodoluminescencerevealsmitigationofthestarkshiftininganquantumwellsbysidoping
AT stowedavid nanocathodoluminescencerevealsmitigationofthestarkshiftininganquantumwellsbysidoping
AT kappersmennoj nanocathodoluminescencerevealsmitigationofthestarkshiftininganquantumwellsbysidoping
AT humphreyscolinj nanocathodoluminescencerevealsmitigationofthestarkshiftininganquantumwellsbysidoping
AT oliverrachela nanocathodoluminescencerevealsmitigationofthestarkshiftininganquantumwellsbysidoping

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