High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric

The use of indium–gallium–zinc oxide (IGZO) has paved the way for high-resolution uniform displays or integrated circuits with transparent and flexible devices. However, achieving highly reliable devices that use IGZO for low-temperature processes remains a technological challenge. We propose the us...

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Detalles Bibliográficos
Autores principales: Fujii, Mami N., Ishikawa, Yasuaki, Miwa, Kazumoto, Okada, Hiromi, Uraoka, Yukiharu, Ono, Shimpei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4683535/
https://www.ncbi.nlm.nih.gov/pubmed/26677773
http://dx.doi.org/10.1038/srep18168

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4683535/
https://www.ncbi.nlm.nih.gov/pubmed/26677773
http://dx.doi.org/10.1038/srep18168

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