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High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric

The use of indium–gallium–zinc oxide (IGZO) has paved the way for high-resolution uniform displays or integrated circuits with transparent and flexible devices. However, achieving highly reliable devices that use IGZO for low-temperature processes remains a technological challenge. We propose the us...

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Detalles Bibliográficos
Autores principales: Fujii, Mami N., Ishikawa, Yasuaki, Miwa, Kazumoto, Okada, Hiromi, Uraoka, Yukiharu, Ono, Shimpei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4683535/
https://www.ncbi.nlm.nih.gov/pubmed/26677773
http://dx.doi.org/10.1038/srep18168
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author Fujii, Mami N.
Ishikawa, Yasuaki
Miwa, Kazumoto
Okada, Hiromi
Uraoka, Yukiharu
Ono, Shimpei
author_facet Fujii, Mami N.
Ishikawa, Yasuaki
Miwa, Kazumoto
Okada, Hiromi
Uraoka, Yukiharu
Ono, Shimpei
author_sort Fujii, Mami N.
collection PubMed
description The use of indium–gallium–zinc oxide (IGZO) has paved the way for high-resolution uniform displays or integrated circuits with transparent and flexible devices. However, achieving highly reliable devices that use IGZO for low-temperature processes remains a technological challenge. We propose the use of IGZO thin-film transistors (TFTs) with an ionic-liquid gate dielectric in order to achieve high-density carrier-accumulated IGZO TFTs with high reliability, and we discuss a distinctive mechanism for the degradation of this organic–inorganic hybrid device under long-term electrical stress. Our results demonstrated that an ionic liquid or gel gate dielectric provides highly reliable and low-voltage operation with IGZO TFTs. Furthermore, high-density carrier accumulation helps improve the TFT characteristics and reliability, and it is highly relevant to the electronic phase control of oxide materials and the degradation mechanism for organic–inorganic hybrid devices.
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spelling pubmed-46835352015-12-21 High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric Fujii, Mami N. Ishikawa, Yasuaki Miwa, Kazumoto Okada, Hiromi Uraoka, Yukiharu Ono, Shimpei Sci Rep Article The use of indium–gallium–zinc oxide (IGZO) has paved the way for high-resolution uniform displays or integrated circuits with transparent and flexible devices. However, achieving highly reliable devices that use IGZO for low-temperature processes remains a technological challenge. We propose the use of IGZO thin-film transistors (TFTs) with an ionic-liquid gate dielectric in order to achieve high-density carrier-accumulated IGZO TFTs with high reliability, and we discuss a distinctive mechanism for the degradation of this organic–inorganic hybrid device under long-term electrical stress. Our results demonstrated that an ionic liquid or gel gate dielectric provides highly reliable and low-voltage operation with IGZO TFTs. Furthermore, high-density carrier accumulation helps improve the TFT characteristics and reliability, and it is highly relevant to the electronic phase control of oxide materials and the degradation mechanism for organic–inorganic hybrid devices. Nature Publishing Group 2015-12-18 /pmc/articles/PMC4683535/ /pubmed/26677773 http://dx.doi.org/10.1038/srep18168 Text en Copyright © 2015, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Fujii, Mami N.
Ishikawa, Yasuaki
Miwa, Kazumoto
Okada, Hiromi
Uraoka, Yukiharu
Ono, Shimpei
High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric
title High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric
title_full High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric
title_fullStr High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric
title_full_unstemmed High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric
title_short High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric
title_sort high-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4683535/
https://www.ncbi.nlm.nih.gov/pubmed/26677773
http://dx.doi.org/10.1038/srep18168
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