Finding Oxygen Reservoir by Using Extremely Small Test Cell Structure for Resistive Random Access Memory with Replaceable Bottom Electrode

Although the presence of an oxygen reservoir (OR) is assumed in many models that explain resistive switching of resistive random access memory (ReRAM) with electrode/metal oxide (MO)/electrode structures, the location of OR is not clear. We have previously reported a method, which involved the use o...

Descripción completa

Detalles Bibliográficos
Autores principales: Kinoshita, Kentaro, Koh, Sang-Gyu, Moriyama, Takumi, Kishida, Satoru
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4686884/
https://www.ncbi.nlm.nih.gov/pubmed/26689682
http://dx.doi.org/10.1038/srep18442

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4686884/
https://www.ncbi.nlm.nih.gov/pubmed/26689682
http://dx.doi.org/10.1038/srep18442

Ejemplares similares