Engineering interface-type resistive switching in BiFeO(3) thin film switches by Ti implantation of bottom electrodes

BiFeO(3) based MIM structures with Ti-implanted Pt bottom electrodes and Au top electrodes have been fabricated on Sapphire substrates. The resulting metal-insulator-metal (MIM) structures show bipolar resistive switching without an electroforming process. It is evidenced that during the BiFeO(3) th...

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Autores principales: You, Tiangui, Ou, Xin, Niu, Gang, Bärwolf, Florian, Li, Guodong, Du, Nan, Bürger, Danilo, Skorupa, Ilona, Jia, Qi, Yu, Wenjie, Wang, Xi, Schmidt, Oliver G., Schmidt, Heidemarie
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4686890/
https://www.ncbi.nlm.nih.gov/pubmed/26692104
http://dx.doi.org/10.1038/srep18623
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author You, Tiangui
Ou, Xin
Niu, Gang
Bärwolf, Florian
Li, Guodong
Du, Nan
Bürger, Danilo
Skorupa, Ilona
Jia, Qi
Yu, Wenjie
Wang, Xi
Schmidt, Oliver G.
Schmidt, Heidemarie
author_facet You, Tiangui
Ou, Xin
Niu, Gang
Bärwolf, Florian
Li, Guodong
Du, Nan
Bürger, Danilo
Skorupa, Ilona
Jia, Qi
Yu, Wenjie
Wang, Xi
Schmidt, Oliver G.
Schmidt, Heidemarie
author_sort You, Tiangui
collection PubMed
description BiFeO(3) based MIM structures with Ti-implanted Pt bottom electrodes and Au top electrodes have been fabricated on Sapphire substrates. The resulting metal-insulator-metal (MIM) structures show bipolar resistive switching without an electroforming process. It is evidenced that during the BiFeO(3) thin film growth Ti diffuses into the BiFeO(3) layer. The diffused Ti effectively traps and releases oxygen vacancies and consequently stabilizes the resistive switching in BiFeO(3) MIM structures. Therefore, using Ti implantation of the bottom electrode, the retention performance can be greatly improved with increasing Ti fluence. For the used raster-scanned Ti implantation the lateral Ti distribution is not homogeneous enough and endurance slightly degrades with Ti fluence. The local resistive switching investigated by current sensing atomic force microscopy suggests the capability of down-scaling the resistive switching cell to one BiFeO(3) grain size by local Ti implantation of the bottom electrode.
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spelling pubmed-46868902015-12-31 Engineering interface-type resistive switching in BiFeO(3) thin film switches by Ti implantation of bottom electrodes You, Tiangui Ou, Xin Niu, Gang Bärwolf, Florian Li, Guodong Du, Nan Bürger, Danilo Skorupa, Ilona Jia, Qi Yu, Wenjie Wang, Xi Schmidt, Oliver G. Schmidt, Heidemarie Sci Rep Article BiFeO(3) based MIM structures with Ti-implanted Pt bottom electrodes and Au top electrodes have been fabricated on Sapphire substrates. The resulting metal-insulator-metal (MIM) structures show bipolar resistive switching without an electroforming process. It is evidenced that during the BiFeO(3) thin film growth Ti diffuses into the BiFeO(3) layer. The diffused Ti effectively traps and releases oxygen vacancies and consequently stabilizes the resistive switching in BiFeO(3) MIM structures. Therefore, using Ti implantation of the bottom electrode, the retention performance can be greatly improved with increasing Ti fluence. For the used raster-scanned Ti implantation the lateral Ti distribution is not homogeneous enough and endurance slightly degrades with Ti fluence. The local resistive switching investigated by current sensing atomic force microscopy suggests the capability of down-scaling the resistive switching cell to one BiFeO(3) grain size by local Ti implantation of the bottom electrode. Nature Publishing Group 2015-12-22 /pmc/articles/PMC4686890/ /pubmed/26692104 http://dx.doi.org/10.1038/srep18623 Text en Copyright © 2015, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
You, Tiangui
Ou, Xin
Niu, Gang
Bärwolf, Florian
Li, Guodong
Du, Nan
Bürger, Danilo
Skorupa, Ilona
Jia, Qi
Yu, Wenjie
Wang, Xi
Schmidt, Oliver G.
Schmidt, Heidemarie
Engineering interface-type resistive switching in BiFeO(3) thin film switches by Ti implantation of bottom electrodes
title Engineering interface-type resistive switching in BiFeO(3) thin film switches by Ti implantation of bottom electrodes
title_full Engineering interface-type resistive switching in BiFeO(3) thin film switches by Ti implantation of bottom electrodes
title_fullStr Engineering interface-type resistive switching in BiFeO(3) thin film switches by Ti implantation of bottom electrodes
title_full_unstemmed Engineering interface-type resistive switching in BiFeO(3) thin film switches by Ti implantation of bottom electrodes
title_short Engineering interface-type resistive switching in BiFeO(3) thin film switches by Ti implantation of bottom electrodes
title_sort engineering interface-type resistive switching in bifeo(3) thin film switches by ti implantation of bottom electrodes
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4686890/
https://www.ncbi.nlm.nih.gov/pubmed/26692104
http://dx.doi.org/10.1038/srep18623
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