Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications

The detrimental influence of oxygen on the performance and reliability of V/III nitride based devices is well known. However, the influence of oxygen on the nature of the incorporation of other co-dopants, such as rare earth ions, has been largely overlooked in GaN. Here, we report the first compreh...

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Detalles Bibliográficos
Autores principales: Mitchell, B., Timmerman, D., Poplawsky, J., Zhu, W., Lee, D., Wakamatsu, R., Takatsu, J., Matsuda, M., Guo, W., Lorenz, K., Alves, E., Koizumi, A., Dierolf, V., Fujiwara, Y.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4698738/
https://www.ncbi.nlm.nih.gov/pubmed/26725651
http://dx.doi.org/10.1038/srep18808

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4698738/
https://www.ncbi.nlm.nih.gov/pubmed/26725651
http://dx.doi.org/10.1038/srep18808

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