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Photoluminescence and electronic transitions in cubic silicon nitride
A spectroscopic study of cubic silicon nitride (γ-Si(3)N(4)) at cryogenic temperatures of 8 K in the near IR - VUV range of spectra with synchrotron radiation excitation provided the first experimental evidence of direct electronic transitions in this material. The observed photoluminescence (PL) ba...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4698759/ https://www.ncbi.nlm.nih.gov/pubmed/26725937 http://dx.doi.org/10.1038/srep18523 |