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Photoluminescence and electronic transitions in cubic silicon nitride

A spectroscopic study of cubic silicon nitride (γ-Si(3)N(4)) at cryogenic temperatures of 8 K in the near IR - VUV range of spectra with synchrotron radiation excitation provided the first experimental evidence of direct electronic transitions in this material. The observed photoluminescence (PL) ba...

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Detalles Bibliográficos
Autores principales:	Museur, Luc, Zerr, Andreas, Kanaev, Andrei
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2016
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4698759/ https://www.ncbi.nlm.nih.gov/pubmed/26725937 http://dx.doi.org/10.1038/srep18523

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