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Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM
We present results from an imaging study of filamentary conduction in silicon suboxide resistive RAM devices. We used a conductive atomic force microscope to etch through devices while measuring current, allowing us to produce tomograms of conductive filaments. To our knowledge this is the first rep...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Royal Society of Chemistry
2015
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4718172/ https://www.ncbi.nlm.nih.gov/pubmed/26482563 http://dx.doi.org/10.1039/c5nr04982b |
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author | Buckwell, Mark Montesi, Luca Hudziak, Stephen Mehonic, Adnan Kenyon, Anthony J. |
author_facet | Buckwell, Mark Montesi, Luca Hudziak, Stephen Mehonic, Adnan Kenyon, Anthony J. |
author_sort | Buckwell, Mark |
collection | PubMed |
description | We present results from an imaging study of filamentary conduction in silicon suboxide resistive RAM devices. We used a conductive atomic force microscope to etch through devices while measuring current, allowing us to produce tomograms of conductive filaments. To our knowledge this is the first report of such measurements in an intrinsic resistance switching material. |
format | Online Article Text |
id | pubmed-4718172 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2015 |
publisher | Royal Society of Chemistry |
record_format | MEDLINE/PubMed |
spelling | pubmed-47181722016-02-02 Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM Buckwell, Mark Montesi, Luca Hudziak, Stephen Mehonic, Adnan Kenyon, Anthony J. Nanoscale Chemistry We present results from an imaging study of filamentary conduction in silicon suboxide resistive RAM devices. We used a conductive atomic force microscope to etch through devices while measuring current, allowing us to produce tomograms of conductive filaments. To our knowledge this is the first report of such measurements in an intrinsic resistance switching material. Royal Society of Chemistry 2015-11-21 2015-10-20 /pmc/articles/PMC4718172/ /pubmed/26482563 http://dx.doi.org/10.1039/c5nr04982b Text en This journal is © The Royal Society of Chemistry 2015 http://creativecommons.org/licenses/by/3.0/ This is an Open Access article distributed under the terms of the Creative Commons Attribution 3.0 Unported License (http://creativecommons.org/licenses/by/3.0/) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. |
spellingShingle | Chemistry Buckwell, Mark Montesi, Luca Hudziak, Stephen Mehonic, Adnan Kenyon, Anthony J. Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM |
title | Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM
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title_full | Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM
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title_fullStr | Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM
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title_full_unstemmed | Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM
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title_short | Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM
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title_sort | conductance tomography of conductive filaments in intrinsic silicon-rich silica rram |
topic | Chemistry |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4718172/ https://www.ncbi.nlm.nih.gov/pubmed/26482563 http://dx.doi.org/10.1039/c5nr04982b |
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