Cargando…
Erratum to: Optical properties and bandgap evolution of ALD HfSiO(x)films
Autores principales: | Yang, Wen, Fronk, Michael, Geng, Yang, Chen, Lin, Sun, Qing-Qing, Gordan, Ovidiu D., Zhou, Peng, Zahn, Dietrich R. T., Zhang, David Wei |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer US
2015
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4724996/ https://www.ncbi.nlm.nih.gov/pubmed/26428013 http://dx.doi.org/10.1186/s11671-015-1079-9 |
Ejemplares similares
-
Optical properties and bandgap evolution of ALD HfSiO(x) films
por: Yang, Wen, et al.
Publicado: (2015) -
Mimicking biological synapses with a-HfSiO(x)-based memristor: implications for artificial intelligence and memory applications
por: Ismail, Muhammad, et al.
Publicado: (2023) -
Work Function Adjustment by Using Dipole Engineering for TaN-Al(2)O(3)-Si(3)N(4)-HfSiO(x)-Silicon Nonvolatile Memory
por: Lin, Yu-Hsien, et al.
Publicado: (2015) -
Erratum to: Enhanced Corrosion Resistance of PVD-CrN Coatings by ALD Sealing Layers
por: Wan, Zhixin, et al.
Publicado: (2017) -
Effect of Thermal Budget on the Electrical Characterization of Atomic Layer Deposited HfSiO/TiN Gate Stack MOSCAP Structure
por: Khan, Z. N., et al.
Publicado: (2016)