InGaN/Dilute-As GaNAs Interface Quantum Well for Red Emitters

The design of InGaN/dilute-As GaNAs interface quantum well (QW) leads to significant redshift in the transition wavelength with improvement in electron-hole wave function overlap and spontaneous emission rate as compared to that of the conventional In(0.2)Ga(0.8)N QW. By using self-consistent six-ba...

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Detalles Bibliográficos
Autores principales: Tan, Chee-Keong, Borovac, Damir, Sun, Wei, Tansu, Nelson
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4725840/
https://www.ncbi.nlm.nih.gov/pubmed/26758552
http://dx.doi.org/10.1038/srep19271

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4725840/
https://www.ncbi.nlm.nih.gov/pubmed/26758552
http://dx.doi.org/10.1038/srep19271

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