Towards a fully functional integrated photonic-electronic platform via a single SiGe growth step

Silicon-germanium (Si(1-x)Ge(x)) has become a material of great interest to the photonics and electronics industries due to its numerous interesting properties including higher carrier mobilities than Si, a tuneable lattice constant, and a tuneable bandgap. In previous work, we have demonstrated the...

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Detalles Bibliográficos
Autores principales: Littlejohns, Callum G., Dominguez Bucio, Thalia, Nedeljkovic, Milos, Wang, Hong, Mashanovich, Goran Z., Reed, Graham T., Gardes, Frederic Y.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4725986/
https://www.ncbi.nlm.nih.gov/pubmed/26783267
http://dx.doi.org/10.1038/srep19425

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4725986/
https://www.ncbi.nlm.nih.gov/pubmed/26783267
http://dx.doi.org/10.1038/srep19425

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