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Towards a fully functional integrated photonic-electronic platform via a single SiGe growth step
Silicon-germanium (Si(1-x)Ge(x)) has become a material of great interest to the photonics and electronics industries due to its numerous interesting properties including higher carrier mobilities than Si, a tuneable lattice constant, and a tuneable bandgap. In previous work, we have demonstrated the...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4725986/ https://www.ncbi.nlm.nih.gov/pubmed/26783267 http://dx.doi.org/10.1038/srep19425 |