Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides

In this work, a new strategy for achieving efficient p-type doping in high bandgap nitride semiconductors to overcome the fundamental issue of high activation energy has been proposed and investigated theoretically, and demonstrated experimentally. Specifically, in an Al(x)Ga(1−x)N/GaN superlattice...

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Detalles Bibliográficos
Autores principales: Liu, Zhiqiang, Yi, Xiaoyan, Yu, Zhiguo, Yuan, Guodong, Liu, Yang, Wang, Junxi, Li, Jinmin, Lu, Na, Ferguson, Ian, Zhang, Yong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4726022/
https://www.ncbi.nlm.nih.gov/pubmed/26777294
http://dx.doi.org/10.1038/srep19537

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4726022/
https://www.ncbi.nlm.nih.gov/pubmed/26777294
http://dx.doi.org/10.1038/srep19537

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