Controllable electrical and physical breakdown of poly-crystalline silicon nanowires by thermally assisted electromigration

The importance of poly-crystalline silicon (poly-Si) in semiconductor manufacturing is rapidly increasing due to its highly controllable conductivity and excellent, uniform deposition quality. With the continuing miniaturization of electronic components, low dimensional structures such as 1-dimensio...

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Detalles Bibliográficos
Autores principales: Park, Jun-Young, Moon, Dong-Il, Seol, Myeong-Lok, Jeon, Chang-Hoon, Jeon, Gwang-Jae, Han, Jin-Woo, Kim, Choong-Ki, Park, Sang-Jae, Lee, Hee Chul, Choi, Yang-Kyu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4726027/
https://www.ncbi.nlm.nih.gov/pubmed/26782708
http://dx.doi.org/10.1038/srep19314

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4726027/
https://www.ncbi.nlm.nih.gov/pubmed/26782708
http://dx.doi.org/10.1038/srep19314

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