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Controllable electrical and physical breakdown of poly-crystalline silicon nanowires by thermally assisted electromigration

The importance of poly-crystalline silicon (poly-Si) in semiconductor manufacturing is rapidly increasing due to its highly controllable conductivity and excellent, uniform deposition quality. With the continuing miniaturization of electronic components, low dimensional structures such as 1-dimensio...

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Autores principales: Park, Jun-Young, Moon, Dong-Il, Seol, Myeong-Lok, Jeon, Chang-Hoon, Jeon, Gwang-Jae, Han, Jin-Woo, Kim, Choong-Ki, Park, Sang-Jae, Lee, Hee Chul, Choi, Yang-Kyu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4726027/
https://www.ncbi.nlm.nih.gov/pubmed/26782708
http://dx.doi.org/10.1038/srep19314
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author Park, Jun-Young
Moon, Dong-Il
Seol, Myeong-Lok
Jeon, Chang-Hoon
Jeon, Gwang-Jae
Han, Jin-Woo
Kim, Choong-Ki
Park, Sang-Jae
Lee, Hee Chul
Choi, Yang-Kyu
author_facet Park, Jun-Young
Moon, Dong-Il
Seol, Myeong-Lok
Jeon, Chang-Hoon
Jeon, Gwang-Jae
Han, Jin-Woo
Kim, Choong-Ki
Park, Sang-Jae
Lee, Hee Chul
Choi, Yang-Kyu
author_sort Park, Jun-Young
collection PubMed
description The importance of poly-crystalline silicon (poly-Si) in semiconductor manufacturing is rapidly increasing due to its highly controllable conductivity and excellent, uniform deposition quality. With the continuing miniaturization of electronic components, low dimensional structures such as 1-dimensional nanowires (NWs) have attracted a great deal of attention. But such components have a much higher current density than 2- or 3- dimensional films, and high current can degrade device lifetime and lead to breakdown problems. Here, we report on the electrical and thermal characteristics of poly-Si NWs, which can also be used to control electrical and physical breakdown under high current density. This work reports a controllable catastrophic change of poly-Si NWs by thermally-assisted electromigration and underlying mechanisms. It also reports the direct and real time observation of these catastrophic changes of poly-Si nanowires for the first time, using scanning electron microscopy.
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spelling pubmed-47260272016-01-28 Controllable electrical and physical breakdown of poly-crystalline silicon nanowires by thermally assisted electromigration Park, Jun-Young Moon, Dong-Il Seol, Myeong-Lok Jeon, Chang-Hoon Jeon, Gwang-Jae Han, Jin-Woo Kim, Choong-Ki Park, Sang-Jae Lee, Hee Chul Choi, Yang-Kyu Sci Rep Article The importance of poly-crystalline silicon (poly-Si) in semiconductor manufacturing is rapidly increasing due to its highly controllable conductivity and excellent, uniform deposition quality. With the continuing miniaturization of electronic components, low dimensional structures such as 1-dimensional nanowires (NWs) have attracted a great deal of attention. But such components have a much higher current density than 2- or 3- dimensional films, and high current can degrade device lifetime and lead to breakdown problems. Here, we report on the electrical and thermal characteristics of poly-Si NWs, which can also be used to control electrical and physical breakdown under high current density. This work reports a controllable catastrophic change of poly-Si NWs by thermally-assisted electromigration and underlying mechanisms. It also reports the direct and real time observation of these catastrophic changes of poly-Si nanowires for the first time, using scanning electron microscopy. Nature Publishing Group 2016-01-19 /pmc/articles/PMC4726027/ /pubmed/26782708 http://dx.doi.org/10.1038/srep19314 Text en Copyright © 2016, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Park, Jun-Young
Moon, Dong-Il
Seol, Myeong-Lok
Jeon, Chang-Hoon
Jeon, Gwang-Jae
Han, Jin-Woo
Kim, Choong-Ki
Park, Sang-Jae
Lee, Hee Chul
Choi, Yang-Kyu
Controllable electrical and physical breakdown of poly-crystalline silicon nanowires by thermally assisted electromigration
title Controllable electrical and physical breakdown of poly-crystalline silicon nanowires by thermally assisted electromigration
title_full Controllable electrical and physical breakdown of poly-crystalline silicon nanowires by thermally assisted electromigration
title_fullStr Controllable electrical and physical breakdown of poly-crystalline silicon nanowires by thermally assisted electromigration
title_full_unstemmed Controllable electrical and physical breakdown of poly-crystalline silicon nanowires by thermally assisted electromigration
title_short Controllable electrical and physical breakdown of poly-crystalline silicon nanowires by thermally assisted electromigration
title_sort controllable electrical and physical breakdown of poly-crystalline silicon nanowires by thermally assisted electromigration
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4726027/
https://www.ncbi.nlm.nih.gov/pubmed/26782708
http://dx.doi.org/10.1038/srep19314
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