Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions

The epitaxy of high-power gallium nitride (GaN) light-emitting diode (LED) on amorphous silicon carbide (a-Si(x)C(1−x)) buffer is demonstrated. The a-Si(x)C(1−x) buffers with different nonstoichiometric C/Si composition ratios are synthesized on SiO(2)/Si substrate by using a low-temperature plasma...

Descripción completa

Detalles Bibliográficos
Autores principales: Cheng, Chih-Hsien, Tzou, An-Jye, Chang, Jung-Hung, Chi, Yu-Chieh, Lin, Yung-Hsiang, Shih, Min-Hsiung, Lee, Chao-Kuei, Wu, Chih-I, Kuo, Hao-Chung, Chang, Chun-Yen, Lin, Gong-Ru
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4726127/
https://www.ncbi.nlm.nih.gov/pubmed/26794268
http://dx.doi.org/10.1038/srep19757

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4726127/
https://www.ncbi.nlm.nih.gov/pubmed/26794268
http://dx.doi.org/10.1038/srep19757

Ejemplares similares