A multi-subband Monte Carlo study on dominance of scattering mechanisms over carrier transport in sub-10-nm Si nanowire FETs

Dominance of various scattering mechanisms in determination of the carrier mobility is examined for silicon (Si) nanowires of sub-10-nm cross-sections. With a focus on p-type channels, the steady-state hole mobility is studied with multi-subband Monte Carlo simulations to consider quantum effects in...

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Detalles Bibliográficos
Autor principal: Ryu, Hoon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4729720/
https://www.ncbi.nlm.nih.gov/pubmed/26815605
http://dx.doi.org/10.1186/s11671-016-1249-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4729720/
https://www.ncbi.nlm.nih.gov/pubmed/26815605
http://dx.doi.org/10.1186/s11671-016-1249-4

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