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A multi-subband Monte Carlo study on dominance of scattering mechanisms over carrier transport in sub-10-nm Si nanowire FETs
Dominance of various scattering mechanisms in determination of the carrier mobility is examined for silicon (Si) nanowires of sub-10-nm cross-sections. With a focus on p-type channels, the steady-state hole mobility is studied with multi-subband Monte Carlo simulations to consider quantum effects in...
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Springer US
2016
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4729720/ https://www.ncbi.nlm.nih.gov/pubmed/26815605 http://dx.doi.org/10.1186/s11671-016-1249-4 |