Novel H(+)-Ion Sensor Based on a Gated Lateral BJT Pair

An H(+)-ion sensor based on a gated lateral bipolar junction transistor (BJT) pair that can operate without the classical reference electrode is proposed. The device is a special type of ion-sensitive field-effect transistor (ISFET). Classical ISFETs have the advantage of miniaturization, but  they...

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Detalles Bibliográficos
Autores principales: Yuan, Heng, Zhang, Jixing, Cao, Chuangui, Zhang, Gangyuan, Zhang, Shaoda
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4732047/
https://www.ncbi.nlm.nih.gov/pubmed/26703625
http://dx.doi.org/10.3390/s16010014

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4732047/
https://www.ncbi.nlm.nih.gov/pubmed/26703625
http://dx.doi.org/10.3390/s16010014

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