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Large area scanning probe microscope in ultra-high vacuum demonstrated for electrostatic force measurements on high-voltage devices

Background: The resolution in electrostatic force microscopy (EFM), a descendant of atomic force microscopy (AFM), has reached nanometre dimensions, necessary to investigate integrated circuits in modern electronic devices. However, the characterization of conducting or semiconducting power devices...

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Autores principales: Gysin, Urs, Glatzel, Thilo, Schmölzer, Thomas, Schöner, Adolf, Reshanov, Sergey, Bartolf, Holger, Meyer, Ernst
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4734346/
https://www.ncbi.nlm.nih.gov/pubmed/26885461
http://dx.doi.org/10.3762/bjnano.6.258
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author Gysin, Urs
Glatzel, Thilo
Schmölzer, Thomas
Schöner, Adolf
Reshanov, Sergey
Bartolf, Holger
Meyer, Ernst
author_facet Gysin, Urs
Glatzel, Thilo
Schmölzer, Thomas
Schöner, Adolf
Reshanov, Sergey
Bartolf, Holger
Meyer, Ernst
author_sort Gysin, Urs
collection PubMed
description Background: The resolution in electrostatic force microscopy (EFM), a descendant of atomic force microscopy (AFM), has reached nanometre dimensions, necessary to investigate integrated circuits in modern electronic devices. However, the characterization of conducting or semiconducting power devices with EFM methods requires an accurate and reliable technique from the nanometre up to the micrometre scale. For high force sensitivity it is indispensable to operate the microscope under high to ultra-high vacuum (UHV) conditions to suppress viscous damping of the sensor. Furthermore, UHV environment allows for the analysis of clean surfaces under controlled environmental conditions. Because of these requirements we built a large area scanning probe microscope operating under UHV conditions at room temperature allowing to perform various electrical measurements, such as Kelvin probe force microscopy, scanning capacitance force microscopy, scanning spreading resistance microscopy, and also electrostatic force microscopy at higher harmonics. The instrument incorporates beside a standard beam deflection detection system a closed loop scanner with a scan range of 100 μm in lateral and 25 μm in vertical direction as well as an additional fibre optics. This enables the illumination of the tip–sample interface for optically excited measurements such as local surface photo voltage detection. Results: We present Kelvin probe force microscopy (KPFM) measurements before and after sputtering of a copper alloy with chromium grains used as electrical contact surface in ultra-high power switches. In addition, we discuss KPFM measurements on cross sections of cleaved silicon carbide structures: a calibration layer sample and a power rectifier. To demonstrate the benefit of surface photo voltage measurements, we analysed the contact potential difference of a silicon carbide p/n-junction under illumination.
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spelling pubmed-47343462016-02-16 Large area scanning probe microscope in ultra-high vacuum demonstrated for electrostatic force measurements on high-voltage devices Gysin, Urs Glatzel, Thilo Schmölzer, Thomas Schöner, Adolf Reshanov, Sergey Bartolf, Holger Meyer, Ernst Beilstein J Nanotechnol Full Research Paper Background: The resolution in electrostatic force microscopy (EFM), a descendant of atomic force microscopy (AFM), has reached nanometre dimensions, necessary to investigate integrated circuits in modern electronic devices. However, the characterization of conducting or semiconducting power devices with EFM methods requires an accurate and reliable technique from the nanometre up to the micrometre scale. For high force sensitivity it is indispensable to operate the microscope under high to ultra-high vacuum (UHV) conditions to suppress viscous damping of the sensor. Furthermore, UHV environment allows for the analysis of clean surfaces under controlled environmental conditions. Because of these requirements we built a large area scanning probe microscope operating under UHV conditions at room temperature allowing to perform various electrical measurements, such as Kelvin probe force microscopy, scanning capacitance force microscopy, scanning spreading resistance microscopy, and also electrostatic force microscopy at higher harmonics. The instrument incorporates beside a standard beam deflection detection system a closed loop scanner with a scan range of 100 μm in lateral and 25 μm in vertical direction as well as an additional fibre optics. This enables the illumination of the tip–sample interface for optically excited measurements such as local surface photo voltage detection. Results: We present Kelvin probe force microscopy (KPFM) measurements before and after sputtering of a copper alloy with chromium grains used as electrical contact surface in ultra-high power switches. In addition, we discuss KPFM measurements on cross sections of cleaved silicon carbide structures: a calibration layer sample and a power rectifier. To demonstrate the benefit of surface photo voltage measurements, we analysed the contact potential difference of a silicon carbide p/n-junction under illumination. Beilstein-Institut 2015-12-28 /pmc/articles/PMC4734346/ /pubmed/26885461 http://dx.doi.org/10.3762/bjnano.6.258 Text en Copyright © 2015, Gysin et al. https://creativecommons.org/licenses/by/2.0https://www.beilstein-journals.org/bjnano/termsThis is an Open Access article under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. The license is subject to the Beilstein Journal of Nanotechnology terms and conditions: (https://www.beilstein-journals.org/bjnano/terms)
spellingShingle Full Research Paper
Gysin, Urs
Glatzel, Thilo
Schmölzer, Thomas
Schöner, Adolf
Reshanov, Sergey
Bartolf, Holger
Meyer, Ernst
Large area scanning probe microscope in ultra-high vacuum demonstrated for electrostatic force measurements on high-voltage devices
title Large area scanning probe microscope in ultra-high vacuum demonstrated for electrostatic force measurements on high-voltage devices
title_full Large area scanning probe microscope in ultra-high vacuum demonstrated for electrostatic force measurements on high-voltage devices
title_fullStr Large area scanning probe microscope in ultra-high vacuum demonstrated for electrostatic force measurements on high-voltage devices
title_full_unstemmed Large area scanning probe microscope in ultra-high vacuum demonstrated for electrostatic force measurements on high-voltage devices
title_short Large area scanning probe microscope in ultra-high vacuum demonstrated for electrostatic force measurements on high-voltage devices
title_sort large area scanning probe microscope in ultra-high vacuum demonstrated for electrostatic force measurements on high-voltage devices
topic Full Research Paper
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4734346/
https://www.ncbi.nlm.nih.gov/pubmed/26885461
http://dx.doi.org/10.3762/bjnano.6.258
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