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Effect of Graphene Oxide on the Properties of Porous Silicon

We studied an effect of the graphene oxide (GO) layer on the optical and electrical properties of porous silicon (PS) in hybrid PS–GO structure created by electrochemical etching of silicon wafer and deposition of GO from water dispersion on PS. With the help of scanning electron microscopy (SEM), a...

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Detalles Bibliográficos
Autores principales: Olenych, Igor B., Aksimentyeva, Olena I., Monastyrskii, Liubomyr S., Horbenko, Yulia Yu., Partyka, Maryan V., Luchechko, Andriy P., Yarytska, Lidia I.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4735084/
https://www.ncbi.nlm.nih.gov/pubmed/26831681
http://dx.doi.org/10.1186/s11671-016-1264-5