Admittance Investigation of MIS Structures with HgTe-Based Single Quantum Wells

This work presents results of the investigation of admittance of metal-insulator-semiconductor structure based on Hg(1 − x)Cd(x)Te grown by molecular beam epitaxy. The structure contains a single quantum well Hg(0.35)Cd(0.65)Te/HgTe/Hg(0.35)Cd(0.65)Te with thickness of 5.6 nm in the sub-surface laye...

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Detalles Bibliográficos
Autores principales: Izhnin, Ihor I., Nesmelov, Sergey N., Dzyadukh, Stanislav M., Voitsekhovskii, Alexander V., Gorn, Dmitry I., Dvoretsky, Sergey A., Mikhailov, Nikolaj N.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Idea
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4735099/
https://www.ncbi.nlm.nih.gov/pubmed/26831691
http://dx.doi.org/10.1186/s11671-016-1276-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4735099/
https://www.ncbi.nlm.nih.gov/pubmed/26831691
http://dx.doi.org/10.1186/s11671-016-1276-1

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