Admittance Investigation of MIS Structures with HgTe-Based Single Quantum Wells

This work presents results of the investigation of admittance of metal-insulator-semiconductor structure based on Hg(1 − x)Cd(x)Te grown by molecular beam epitaxy. The structure contains a single quantum well Hg(0.35)Cd(0.65)Te/HgTe/Hg(0.35)Cd(0.65)Te with thickness of 5.6 nm in the sub-surface laye...

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Autores principales: Izhnin, Ihor I., Nesmelov, Sergey N., Dzyadukh, Stanislav M., Voitsekhovskii, Alexander V., Gorn, Dmitry I., Dvoretsky, Sergey A., Mikhailov, Nikolaj N.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Idea
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4735099/
https://www.ncbi.nlm.nih.gov/pubmed/26831691
http://dx.doi.org/10.1186/s11671-016-1276-1
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author Izhnin, Ihor I.
Nesmelov, Sergey N.
Dzyadukh, Stanislav M.
Voitsekhovskii, Alexander V.
Gorn, Dmitry I.
Dvoretsky, Sergey A.
Mikhailov, Nikolaj N.
author_facet Izhnin, Ihor I.
Nesmelov, Sergey N.
Dzyadukh, Stanislav M.
Voitsekhovskii, Alexander V.
Gorn, Dmitry I.
Dvoretsky, Sergey A.
Mikhailov, Nikolaj N.
author_sort Izhnin, Ihor I.
collection PubMed
description This work presents results of the investigation of admittance of metal-insulator-semiconductor structure based on Hg(1 − x)Cd(x)Te grown by molecular beam epitaxy. The structure contains a single quantum well Hg(0.35)Cd(0.65)Te/HgTe/Hg(0.35)Cd(0.65)Te with thickness of 5.6 nm in the sub-surface layer of the semiconductor. Both the conductance-voltage and capacitance-voltage characteristics show strong oscillations when the metal-insulator-semiconductor (MIS) structure with a single quantum well based on HgTe is biased into the strong inversion mode. Also, oscillations on the voltage dependencies of differential resistance of the space charge region were observed. These oscillations were related to the recharging of quantum levels in HgTe.
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spelling pubmed-47350992016-02-12 Admittance Investigation of MIS Structures with HgTe-Based Single Quantum Wells Izhnin, Ihor I. Nesmelov, Sergey N. Dzyadukh, Stanislav M. Voitsekhovskii, Alexander V. Gorn, Dmitry I. Dvoretsky, Sergey A. Mikhailov, Nikolaj N. Nanoscale Res Lett Nano Idea This work presents results of the investigation of admittance of metal-insulator-semiconductor structure based on Hg(1 − x)Cd(x)Te grown by molecular beam epitaxy. The structure contains a single quantum well Hg(0.35)Cd(0.65)Te/HgTe/Hg(0.35)Cd(0.65)Te with thickness of 5.6 nm in the sub-surface layer of the semiconductor. Both the conductance-voltage and capacitance-voltage characteristics show strong oscillations when the metal-insulator-semiconductor (MIS) structure with a single quantum well based on HgTe is biased into the strong inversion mode. Also, oscillations on the voltage dependencies of differential resistance of the space charge region were observed. These oscillations were related to the recharging of quantum levels in HgTe. Springer US 2016-02-01 /pmc/articles/PMC4735099/ /pubmed/26831691 http://dx.doi.org/10.1186/s11671-016-1276-1 Text en © Izhnin et al. 2016 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Idea
Izhnin, Ihor I.
Nesmelov, Sergey N.
Dzyadukh, Stanislav M.
Voitsekhovskii, Alexander V.
Gorn, Dmitry I.
Dvoretsky, Sergey A.
Mikhailov, Nikolaj N.
Admittance Investigation of MIS Structures with HgTe-Based Single Quantum Wells
title Admittance Investigation of MIS Structures with HgTe-Based Single Quantum Wells
title_full Admittance Investigation of MIS Structures with HgTe-Based Single Quantum Wells
title_fullStr Admittance Investigation of MIS Structures with HgTe-Based Single Quantum Wells
title_full_unstemmed Admittance Investigation of MIS Structures with HgTe-Based Single Quantum Wells
title_short Admittance Investigation of MIS Structures with HgTe-Based Single Quantum Wells
title_sort admittance investigation of mis structures with hgte-based single quantum wells
topic Nano Idea
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4735099/
https://www.ncbi.nlm.nih.gov/pubmed/26831691
http://dx.doi.org/10.1186/s11671-016-1276-1
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