Tinselenidene: a Two-dimensional Auxetic Material with Ultralow Lattice Thermal Conductivity and Ultrahigh Hole Mobility

By means of extensive ab initio calculations, a new two-dimensional (2D) atomic material tin selenide monolayer (coined as tinselenidene) is predicted to be a semiconductor with an indirect gap (~1.45 eV) and a high hole mobility (of order 10000 cm(2)V(−1)S(−1)), and will bear an indirect-direct gap...

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Detalles Bibliográficos
Autores principales: Zhang, Li-Chuan, Qin, Guangzhao, Fang, Wu-Zhang, Cui, Hui-Juan, Zheng, Qing-Rong, Yan, Qing-Bo, Su, Gang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4735295/
https://www.ncbi.nlm.nih.gov/pubmed/26830330
http://dx.doi.org/10.1038/srep19830

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4735295/
https://www.ncbi.nlm.nih.gov/pubmed/26830330
http://dx.doi.org/10.1038/srep19830

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