Dynamic detection of electron spin accumulation in ferromagnet–semiconductor devices by ferromagnetic resonance

A distinguishing feature of spin accumulation in ferromagnet–semiconductor devices is its precession in a magnetic field. This is the basis for detection techniques such as the Hanle effect, but these approaches become ineffective as the spin lifetime in the semiconductor decreases. For this reason,...

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Detalles Bibliográficos
Autores principales: Liu, Changjiang, Patel, Sahil J., Peterson, Timothy A., Geppert, Chad C., Christie, Kevin D., Stecklein, Gordon, Palmstrøm, Chris J., Crowell, Paul A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4735623/
https://www.ncbi.nlm.nih.gov/pubmed/26777243
http://dx.doi.org/10.1038/ncomms10296

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4735623/
https://www.ncbi.nlm.nih.gov/pubmed/26777243
http://dx.doi.org/10.1038/ncomms10296

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