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Dynamic detection of electron spin accumulation in ferromagnet–semiconductor devices by ferromagnetic resonance
A distinguishing feature of spin accumulation in ferromagnet–semiconductor devices is its precession in a magnetic field. This is the basis for detection techniques such as the Hanle effect, but these approaches become ineffective as the spin lifetime in the semiconductor decreases. For this reason,...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4735623/ https://www.ncbi.nlm.nih.gov/pubmed/26777243 http://dx.doi.org/10.1038/ncomms10296 |