Resistance switching behavior of atomic layer deposited SrTiO(3) film through possible formation of Sr(2)Ti(6)O(13) or Sr(1)Ti(11)O(20) phases

Identification of microstructural evolution of nanoscale conducting phase, such as conducting filament (CF), in many resistance switching (RS) devices is a crucial factor to unambiguously understand the electrical behaviours of the RS-based electronic devices. Among the diverse RS material systems,...

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Detalles Bibliográficos
Autores principales: Lee, Woongkyu, Yoo, Sijung, Yoon, Kyung Jean, Yeu, In Won, Chang, Hye Jung, Choi, Jung-Hae, Hoffmann-Eifert, Susanne, Waser, Rainer, Hwang, Cheol Seong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4735854/
https://www.ncbi.nlm.nih.gov/pubmed/26830978
http://dx.doi.org/10.1038/srep20550

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4735854/
https://www.ncbi.nlm.nih.gov/pubmed/26830978
http://dx.doi.org/10.1038/srep20550

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