Trilayer Tunnel Selectors for Memristor Memory Cells

An integrated memory cell with a mem­ristor and a trilayer crested barrier selector, showing repeatable nonlinear current–voltage switching loops is presented. The fully atomic‐layer‐deposited TaN(1+x)/Ta(2)O(5)/TaN(1+x) crested barrier selector yields a large nonlinearity (>10(4)), high enduranc...

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Detalles Bibliográficos
Autores principales: Choi, Byung Joon, Zhang, Jiaming, Norris, Kate, Gibson, Gary, Kim, Kyung Min, Jackson, Warren, Zhang, Min‐Xian Max, Li, Zhiyong, Yang, J. Joshua, Williams, R. Stanley
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2015
Materias:
Communications
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4737268/
https://www.ncbi.nlm.nih.gov/pubmed/26584142
http://dx.doi.org/10.1002/adma.201503604

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4737268/
https://www.ncbi.nlm.nih.gov/pubmed/26584142
http://dx.doi.org/10.1002/adma.201503604

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