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Trilayer Tunnel Selectors for Memristor Memory Cells
An integrated memory cell with a memristor and a trilayer crested barrier selector, showing repeatable nonlinear current–voltage switching loops is presented. The fully atomic‐layer‐deposited TaN(1+x)/Ta(2)O(5)/TaN(1+x) crested barrier selector yields a large nonlinearity (>10(4)), high enduranc...
| Autores principales: | , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
John Wiley and Sons Inc.
2015
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4737268/ https://www.ncbi.nlm.nih.gov/pubmed/26584142 http://dx.doi.org/10.1002/adma.201503604 |
| _version_ | 1782413451951341568 |
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| author | Choi, Byung Joon Zhang, Jiaming Norris, Kate Gibson, Gary Kim, Kyung Min Jackson, Warren Zhang, Min‐Xian Max Li, Zhiyong Yang, J. Joshua Williams, R. Stanley |
| author_facet | Choi, Byung Joon Zhang, Jiaming Norris, Kate Gibson, Gary Kim, Kyung Min Jackson, Warren Zhang, Min‐Xian Max Li, Zhiyong Yang, J. Joshua Williams, R. Stanley |
| author_sort | Choi, Byung Joon |
| collection | PubMed |
| description | An integrated memory cell with a memristor and a trilayer crested barrier selector, showing repeatable nonlinear current–voltage switching loops is presented. The fully atomic‐layer‐deposited TaN(1+x)/Ta(2)O(5)/TaN(1+x) crested barrier selector yields a large nonlinearity (>10(4)), high endurance (>10(8)), low variability, and low temperature dependence. [Image: see text] |
| format | Online Article Text |
| id | pubmed-4737268 |
| institution | National Center for Biotechnology Information |
| language | English |
| publishDate | 2015 |
| publisher | John Wiley and Sons Inc. |
| record_format | MEDLINE/PubMed |
| spelling | pubmed-47372682016-07-08 Trilayer Tunnel Selectors for Memristor Memory Cells Choi, Byung Joon Zhang, Jiaming Norris, Kate Gibson, Gary Kim, Kyung Min Jackson, Warren Zhang, Min‐Xian Max Li, Zhiyong Yang, J. Joshua Williams, R. Stanley Adv Mater Communications An integrated memory cell with a memristor and a trilayer crested barrier selector, showing repeatable nonlinear current–voltage switching loops is presented. The fully atomic‐layer‐deposited TaN(1+x)/Ta(2)O(5)/TaN(1+x) crested barrier selector yields a large nonlinearity (>10(4)), high endurance (>10(8)), low variability, and low temperature dependence. [Image: see text] John Wiley and Sons Inc. 2015-11-19 2016-01-13 /pmc/articles/PMC4737268/ /pubmed/26584142 http://dx.doi.org/10.1002/adma.201503604 Text en © 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim Open access. |
| spellingShingle | Communications Choi, Byung Joon Zhang, Jiaming Norris, Kate Gibson, Gary Kim, Kyung Min Jackson, Warren Zhang, Min‐Xian Max Li, Zhiyong Yang, J. Joshua Williams, R. Stanley Trilayer Tunnel Selectors for Memristor Memory Cells |
| title | Trilayer Tunnel Selectors for Memristor Memory Cells |
| title_full | Trilayer Tunnel Selectors for Memristor Memory Cells |
| title_fullStr | Trilayer Tunnel Selectors for Memristor Memory Cells |
| title_full_unstemmed | Trilayer Tunnel Selectors for Memristor Memory Cells |
| title_short | Trilayer Tunnel Selectors for Memristor Memory Cells |
| title_sort | trilayer tunnel selectors for memristor memory cells |
| topic | Communications |
| url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4737268/ https://www.ncbi.nlm.nih.gov/pubmed/26584142 http://dx.doi.org/10.1002/adma.201503604 |
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