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Trilayer Tunnel Selectors for Memristor Memory Cells
An integrated memory cell with a memristor and a trilayer crested barrier selector, showing repeatable nonlinear current–voltage switching loops is presented. The fully atomic‐layer‐deposited TaN(1+x)/Ta(2)O(5)/TaN(1+x) crested barrier selector yields a large nonlinearity (>10(4)), high enduranc...
| Autores principales: | , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
John Wiley and Sons Inc.
2015
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4737268/ https://www.ncbi.nlm.nih.gov/pubmed/26584142 http://dx.doi.org/10.1002/adma.201503604 |