Ultralow-power switching via defect engineering in germanium telluride phase-change memory devices

Crystal–amorphous transformation achieved via the melt-quench pathway in phase-change memory involves fundamentally inefficient energy conversion events; and this translates to large switching current densities, responsible for chemical segregation and device degradation. Alternatively, introducing...

Descripción completa

Detalles Bibliográficos
Autores principales: Nukala, Pavan, Lin, Chia-Chun, Composto, Russell, Agarwal, Ritesh
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4737760/
https://www.ncbi.nlm.nih.gov/pubmed/26805748
http://dx.doi.org/10.1038/ncomms10482

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4737760/
https://www.ncbi.nlm.nih.gov/pubmed/26805748
http://dx.doi.org/10.1038/ncomms10482

Ejemplares similares