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Ultralow-power switching via defect engineering in germanium telluride phase-change memory devices
Crystal–amorphous transformation achieved via the melt-quench pathway in phase-change memory involves fundamentally inefficient energy conversion events; and this translates to large switching current densities, responsible for chemical segregation and device degradation. Alternatively, introducing...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4737760/ https://www.ncbi.nlm.nih.gov/pubmed/26805748 http://dx.doi.org/10.1038/ncomms10482 |