Corrigendum: High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering

Detalles Bibliográficos
Autores principales: Perello, David J., Chae, Sang Hoon, Song, Seunghyun, Lee, Young Hee
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Corrigenda
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4738328/
https://www.ncbi.nlm.nih.gov/pubmed/26818132
http://dx.doi.org/10.1038/ncomms10428

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4738328/
https://www.ncbi.nlm.nih.gov/pubmed/26818132
http://dx.doi.org/10.1038/ncomms10428

Ejemplares similares