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Corrigendum: High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4738328/ https://www.ncbi.nlm.nih.gov/pubmed/26818132 http://dx.doi.org/10.1038/ncomms10428 |
| _version_ | 1782413590689480704 |
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| author | Perello, David J. Chae, Sang Hoon Song, Seunghyun Lee, Young Hee |
| author_facet | Perello, David J. Chae, Sang Hoon Song, Seunghyun Lee, Young Hee |
| author_sort | Perello, David J. |
| collection | PubMed |
| description | |
| format | Online Article Text |
| id | pubmed-4738328 |
| institution | National Center for Biotechnology Information |
| language | English |
| publishDate | 2016 |
| publisher | Nature Publishing Group |
| record_format | MEDLINE/PubMed |
| spelling | pubmed-47383282016-03-04 Corrigendum: High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering Perello, David J. Chae, Sang Hoon Song, Seunghyun Lee, Young Hee Nat Commun Corrigenda Nature Publishing Group 2016-01-28 /pmc/articles/PMC4738328/ /pubmed/26818132 http://dx.doi.org/10.1038/ncomms10428 Text en Copyright © 2015, Nature Publishing Group, a division of Macmillan Publishers Limited. All Rights Reserved. http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
| spellingShingle | Corrigenda Perello, David J. Chae, Sang Hoon Song, Seunghyun Lee, Young Hee Corrigendum: High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering |
| title | Corrigendum: High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering |
| title_full | Corrigendum: High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering |
| title_fullStr | Corrigendum: High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering |
| title_full_unstemmed | Corrigendum: High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering |
| title_short | Corrigendum: High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering |
| title_sort | corrigendum: high-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering |
| topic | Corrigenda |
| url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4738328/ https://www.ncbi.nlm.nih.gov/pubmed/26818132 http://dx.doi.org/10.1038/ncomms10428 |
| work_keys_str_mv | AT perellodavidj corrigendumhighperformancentypeblackphosphorustransistorswithtypecontrolviathicknessandcontactmetalengineering AT chaesanghoon corrigendumhighperformancentypeblackphosphorustransistorswithtypecontrolviathicknessandcontactmetalengineering AT songseunghyun corrigendumhighperformancentypeblackphosphorustransistorswithtypecontrolviathicknessandcontactmetalengineering AT leeyounghee corrigendumhighperformancentypeblackphosphorustransistorswithtypecontrolviathicknessandcontactmetalengineering |